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| CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 200 Amperes/250 Volts A B F E G H E H G E S K R 4 - Mounting Holes L GuP EuP GvP EvP D C GwP EwP GuN EuN GvN EvN TC Measured Point u v TC Measured M Point GwN EwN w N 5 - M5 NUTS E H J E J H E K 0.110 - 0.5 Tab P Q Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies P GuP EuP U GvP EvP V GwP EwP W GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.540.01 4.02 3.150.01 0.43 0.91 0.47 0.85 0.91 Millimeters 107.0 90.00.25 102.0 80.00.25 11.0 23.0 12.0 21.7 23.0 Dimensions K L M N P Q R S Inches 0.15 0.67 1.91 0.03 0.32 1.02 0.22 Dia. 0.57 Millimeters 3.75 17.0 48.5 0.8 8.1 26.0 5.5 Dia. 14.4 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-5F is a 250V (VCES), 200 Ampere SixIGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-5F Trench Gate Design Six IGBTMODTM 200 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM200TU-5F -40 to 150 -40 to 125 250 20 200 400* 200 400* 600 31 31 680 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 10V, Tj = 25C IC = 200A, VGE = 10V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 100V, IC = 200A, VGE = 10V IE = 200A, VGE = 0V Min. - - 3.0 - - - - - Typ. - - 4.0 1.2 1.1 Max. 1 0.5 5.0 1.7 - - 2.0 Units mA A Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 100V, IC = 200A, VGE1 = VGE2 = 10V, RG = 13 , Resistive Load Switching Operation IE = 200A, diE/dt = -400A/s IE = 200A, diE/dt = -400A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - Max. 66 3.0 2.3 700 1800 700 500 300 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.09 Max. 0.21 0.47 - Units C/W C/W C/W * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-5F Trench Gate Design Six IGBTMODTM 200 Amperes/250 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT, IC, (AMPERES) 10 VGE = 15V 86 400 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 2.0 VCE = 10V Tj = 25C Tj = 125C VGE = 10V Tj = 25C Tj = 125C 5.75 Tj = 25oC 5.5 300 300 1.5 200 5.25 200 1.0 100 5 4.75 4.5 100 0.5 0 0 1 2 3 0 5 0 2 4 6 8 10 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 80 160 240 320 400 COLLECTOR-CURRENT, IC, (AMPERES) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 4 3 2 1 EMITTER CURRENT, IE, (AMPERES) Cies 101 IC = 400A IC = 200A 102 Coes 100 Cres VGE = 0V f = 1MHz IC = 80A 0 0 5 10 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 di/dt = -400A/sec Tj = 25C trr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 200A SWITCHING TIME, (ns) 15 VCC = 50V VCC = 100V 102 102 10 Irr 5 101 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 103 0 0 0.5 1.0 1.5 2.0 GATE CHARGE, QG, ( C) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-5F Trench Gate Design Six IGBTMODTM 200 Amperes/250 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.21C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.47C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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